Simulation of TN Cell

Figure 3.1: 

Figure 3.1 shows the V-T characteristic of TN cell. The characteristic is changing for various values of K33/K11. Here only K33 is changing and all other parameters including K11 are fixed. Surprisingly  the transmittance (T) is increasing just above the threshold voltage for higher values of K33.

Figure 3.2:

Figure 3.2 is a closer look of Fig 3.1 for better visualization. 

Figure 3.3:

Figure 3.3 shows the gradient of transmittance (dT/dV) as a function of applied voltage for various K33. 

Figure 3.4: Director (θ, φ) profile as a function of unit thickness (z/L) for different applied voltages. K33/K11 = 1.0 is fixed. 

Figure 3.5: dφ/dz as a function of z/L for various applied voltages. K33/K11 = 1.0 is fixed.  

Figure 3.6: Director (θ, φ) profile as a function of unit thickness (z/L) for different applied voltages. K33/K11 = 2.0 is fixed.

Figure 3.7: Director (θ, φ) profile as a function of unit thickness (z/L) for different applied voltages. K33/K11 = 2.50 is fixed.

Figure 3.8: dφ/dz as a function of z/L for various applied voltages. K33/K11 = 2.5 is fixed.

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Now we increase thickness of the TN cell to get the maximum transmittance following Gooch-Tarry condition: Δnd = 0.476 μm for λ = 550 nm. 

Figure 3.9: Red dot indicates the threshold voltage

Figure 3.10:

Figure 3.11: